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X iv :2 11 2. 03 13 8v 1 [ co nd -m at .m es -h al l] 6 D ec 2 02 1 Density dependence of the excitation gaps in an undoped Si/SiGe double-quantum-well heterostructure D. Chen, S. Cai, N.-W. Hsu, S.-H. Huang, Y. Chuang, E. Nielsen, J.-Y. Li, 4 C. W. Liu, T. M. Lu, and D. Laroche a) Department of Physics, University of Florida, Gainesville, FL 32611, USA Department of Electrical Engineering and Graduate Institute of Electronic Engineering, National Taiwan University, Taipei 10617, Taiwan Sandia National Laboratories, Albuquerque, New Mexico 87185, USA Taiwan Semiconductor Research Institute, Hsinchu 30078, Taiwan