LAUSR

In this study, a novel inductively coupled plasma (ICP) system is proposed. It comprises a segmented dielectric window and a metal frame. For the proposed ICP system, a thin window can be designed, thereby compensating for the power loss caused by the metal frame. The proposed ICP system has two potential advantages: it can enhance the controllability of the gas flow field and it can reduce the capacitive power coupling. These characteristics enable the superior uniformity and reliable operation of ICP systems for semiconductor processes. The characteristics of the proposed ICP system are investigated using three-dimensional fluid self-consistent plasma simulations and experiments. The proposed ICP system exhibits performance similar to that of the conventional ICP system currently used in etching and deposition processes.