LAUSR

Topological materials, such as Cd3As2, are of great importance for next-generation computing systems where energy efficiency is paramount. For example, in spin–orbit torque magnetic access memory (SOT-MRAM), topological materials generate the spin–orbit torque necessary for magnetization switching of an adjacent magnetic layer. Current shunting at the ferromagnet–topological material interface can be detrimental for spin generation and overall SOT efficiency. Here, the current shunting effect is analyzed in permalloy- and gold-shunted Cd3As2 disk structures using angle-dependent magnetoresistance measurements. We observe Shubnikov–de Haas oscillations and weak antilocalization. Hakami–Larkin–Nagaoka and Tkachov–Hankiewicz models are used to evaluate the weak antilocalization. We confirm the effects of current shunting and discuss its detriment to the efficiency of spin-based devices.