LAUSR

Surface plasmons resonance is a promising way to improve the luminescence efficiency of light-emitting materials including InGaN/GaN-based quantum wells; however, it has rarely been used for GaN epilayer with metal nanoparticles (NPs). We demonstrated in enhancing the bandgap emission from GaN epilayer by localized surface plasmon resonance (LSPR) in a quadrupole oscillation mode using Ag NPs fabricated on the GaN. The shapes of the Ag NPs fabricated on the GaN substrates gradually changed over time and were eventually destroyed completely. This should be the reason why previous studies of enhancement of GaN-based materials by using Ag NPs have not performed as good results as expected. This problem was solved by employing oxide thin films to protect the Ag NPs from destruction or aggregation and obtain enhanced photoluminescence of the GaN epilayer. The localized and enhanced electric fields have been calculated by the finite difference time domain (FDTD) method to elucidate the enhancement mechanism. However, it has been still difficult to use this method to reproduce the enhanced emissions caused by the quantum interaction between the surface plasmons and excitons. We reproduced the highly efficient emissions attributed to the Purcell effect by evaluating the nanoantenna effect using the FDTD method. This technique confirmed that an oxide thin film between the GaN substrate and Ag NPs played an effective role in the local enhancement of the electromagnetic field and light extraction from the LSPR mode when several types of oxide thin films were considered.