LAUSR

Surface acoustic wave (SAW) resonators are key components of mobile communication systems, and the development of wideband SAW resonators is especially required because next-generation mobile communication systems require high-speed data transmission using wide frequency bands. In this study, two layered structures—(i) a c-axis-tilted ScAlN bilayer film/silicon substrate and (ii) a c-axis-zigzag ScAlN film/silicon substrate—are proposed for highly coupled SAW resonators, and the electromechanical coupling coefficient K2 of the non-leaky Rayleigh-mode SAW propagating in these structures is investigated theoretically. With a proper c-axis tilt angle and thickness selection of the ScAlN film, the first-mode Rayleigh SAW in the c-axis-tilted ScAlN bilayer film/silicon substrate and c-axis-zigzag ScAlN film/silicon substrate offers high K2. The maximum K2 was 9.56%, obtained in the c-axis-zigzag ScAlN film/silicon substrate structure, which was 2.5 times the maximum K2 in the c-axis-tilted ScAlN monolayer film/silicon substrate structure; this is because the c-axis-zigzag ScAlN films increase the shear vertical component of the SAW particle displacement, most of which is concentrated in the c-axis-zigzag ScAlN film on the silicon substrate. It is also important that the second-mode SAW (Sezawa wave) in the c-axis-zigzag ScAlN film/silicon substrate structure is not excited when the K2 value of the first-mode SAW is maximized. The techniques for fabricating a c-axis-tilted ScAlN film and a c-axis-zigzag ScAlN film have been reported, and well-established micromachining technology related to silicon semiconductors offers significant advantages in the manufacturing and processing of SAW resonators. Therefore, the c-axis-zigzag ScAlN film/silicon substrate structure has significant potential for SAW device applications.