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This work provides a proof-of-concept demonstration of the room-temperature quantum current source based on a nanoscale metal-oxide-semiconductor-field-effect-transistor (MOSFET). Using a low leakage MOSFET design, the current source achieved 1.000 11 ± 0.000 22 charges… Click to show full abstract
This work provides a proof-of-concept demonstration of the room-temperature quantum current source based on a nanoscale metal-oxide-semiconductor-field-effect-transistor (MOSFET). Using a low leakage MOSFET design, the current source achieved 1.000 11 ± 0.000 22 charges per cycle without any leakage correction scheme. The achieved accuracy is limited by noise in the very low level of measured current and by calibration uncertainty.
Keywords:
field effect;
temperature quantum;
quantum current;
current source;
source;
room temperature
Journal Title: Applied Physics Letters
Year Published: 2023
Link to full text (if available)
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Journal Title: Applied Physics Letters
Year Published: 2023
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!