LAUSR

β-Ga2O3 is attracting considerable attention for applications in power electronics and deep ultraviolet (DUV) optoelectronics owing to the ultra-wide bandgap of 4.85 eV and amendable n-type conductivity. In this work, we report the achievement of Si-doped β-Ga2O3 (Si:β-Ga2O3) thin films grown on vicinal α-Al2O3 (0001) substrates with high electrical conductivity and DUV transparency of promising potential as transparent electrodes. The use of Al2O3 substrates with miscut angles promotes step-flow growth mode, leading to substantial improvement of crystalline quality and electrical properties of the Si:β-Ga2O3 films. A high conductivity of 37 S·cm−1 and average DUV transparency of 85% have been achieved for 0.5% Si-doped film grown on a 6° miscut substrate. High-resolution x-ray and ultraviolet photoemission spectroscopy were further used to elucidate the surface electronic properties of the grown Si:β-Ga2O3 films. An upward surface band bending was found at the surface region of Si:β-Ga2O3 films. Interestingly, all the Si:β-Ga2O3 films have a very low work function of approximately 3.3 eV, which makes Si:β-Ga2O3 suitable materials for efficient electron injection. The present Si:β-Ga2O3 films with high conductivity, DUV transparency, and low work function would be useful as the DUV transparent electrode to develop advanced DUV optoelectronic devices.