LAUSR

We converted Gaussian-distributed voltage noise applied to an electron reservoir into the non-equilibrium free energy of a nanometer-scale dot connected to the reservoir via an energy barrier. Counting statistics of single-electron motion into and out of the dot through the energy barrier allows us to quantitatively analyze the energy transported into the dot as well as changes in the internal energy and effective temperature of the dot in this noise-induced non-equilibrium steady state (NESS). By analyzing the transition rates of electrons moving into and out of the dot, we confirmed that the rectification effect caused by the asymmetry with respect to the direction of electron motion is the origin of the increase in the internal energy of the dot. The information on energy transport in a nanometer-scale dot in the noise-induced NESS obtained in this study with electron counting statistics clarifies the relationship between the non-equilibrium dynamics of a nanodevice and noise applied to it. This study provides us with the means to evaluate device operation using noise as a resource.