LAUSR.org creates dashboard-style pages of related content for over 1.5 million academic articles. Sign Up to like articles & get recommendations!

Influence of indium doping on electrical performance of gallium oxide thin-film transistors

Photo from wikipedia

In the field of oxide semiconductor thin-film transistors (TFTs), the occurrence of charge trapping in the gate dielectric and interfaces presents significant challenges to their operational stability and reliability. In… Click to show full abstract

In the field of oxide semiconductor thin-film transistors (TFTs), the occurrence of charge trapping in the gate dielectric and interfaces presents significant challenges to their operational stability and reliability. In this study, we present high-performing amorphous Ga2O3 TFTs created using atomic layer deposition with varying indium doping concentrations. The channel length (Lch) and channel width (Wch) are 50 and 200 μm, respectively. As the Indium concentration increases from 0% to 60%, the charge trap density (Nit) decreases, resulting in a smaller hysteresis window. The TFTs with a doping concentration of 20% are particularly noteworthy, exhibiting high field-effect mobility (22.6 cm2 V−1 s−1), lower subthreshold swing (160 mV/dec) than amorphous Ga2O3 channel devices, a high on-off current ratio (109), an appropriate threshold voltage (−1 V), and a substantial output current (26 mA/mm at VGS = 16 V).

Keywords: influence indium; indium doping; thin film; film transistors

Journal Title: Applied Physics Letters
Year Published: 2023

Link to full text (if available)


Share on Social Media:                               Sign Up to like & get
recommendations!

Related content

More Information              News              Social Media              Video              Recommended



                Click one of the above tabs to view related content.