LAUSR

Perovskite memristors have attracted considerable attention for their potential in emulating artificial synapses. However, the widespread use of the toxic lead-based perovskites poses significant challenges to futural application. In this work, we developed a lead-free memristor with an Ag/PMMA/Cs3Cu2I5/ITO architecture, in which the Cs3Cu2I5 halide perovskites functional layer was fabricated by physical vapor deposition. The memristor demonstrated a data retention time of 104 s and stable resistive switching behavior over 100 cycles under electrical pulses stimulation. Furthermore, it emulated a range of biologically relevant synaptic functions, including paired-pulse facilitation, short-term plasticity, long-term plasticity, spike-amplitude-dependent plasticity, spike-number-dependent plasticity, and spike-duration-dependent plasticity. Capitalizing on its nonlinear dynamics and short-term memory characteristics, the device was further integrated into a reservoir computing (RC) system. The RC system demonstrated strong recognition performance and robustness when tested with distorted digital image datasets. These results suggest that the Cs3Cu2I5-based memristor provides a promising, environmentally friendly platform for next-generation artificial intelligence hardware.