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The threshold energy of Auger recombination in HgTe/CdxHg1 – xTe heterostructures with quantum wells (QWs) is analysed numerically for different compositions of the solid solution in barriers. It is demonstrated… Click to show full abstract
The threshold energy of Auger recombination in HgTe/CdxHg1 – xTe heterostructures with quantum wells (QWs) is analysed numerically for different compositions of the solid solution in barriers. It is demonstrated that the threshold energy depends nonmonotonically on the cadmium content in barriers and reaches a maximum at x ~0.6 – 0.7. A comparison of the results of numerical calculations with experimental data on the temperature quenching of stimulated emission in a Cd0.1Hg0.9Te/Cd0.65Hg0.35Te structure gives grounds to expect a more than twofold increase in the quenching temperature of stimulated emission in structures with pure HgTe QWs and barriers with a high (~0.6) cadmium content.
Journal Title: Quantum Electronics
Year Published: 2019
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