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SignificanceResistivity comparison methodology was developed to measure and analyze the contact-induced Fermi-level shift (CIFS) as well as the interfacial charge transfer in low-dimensional semimetal-semiconductor (Sm-S) systems. The Fermi-level catch-up model… Click to show full abstract
SignificanceResistivity comparison methodology was developed to measure and analyze the contact-induced Fermi-level shift (CIFS) as well as the interfacial charge transfer in low-dimensional semimetal-semiconductor (Sm-S) systems. The Fermi-level catch-up model was further built to depict the gate-tunable CIFS in such Sm-S systems. The Schottky barrier height for the Sm-S junction can be modified by introducing the CIFS term. The progress in this work will have an important role in promoting the research of Sm-S junctions, which are essential building blocks for future low-dimensional nanodevices.
Journal Title: Proceedings of the National Academy of Sciences of the United States of America
Year Published: 2022
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