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A coupled-inductor dual-mode switched voltage-controlled oscillator using GaN-on-Si HEMT technology

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ABSTRACT A coupled-inductors dual-mode switch cross-coupled pair voltage-controlled oscillator (VCO) was presented, adopting GaN-on-Si high-electron-mobility transistor technology. The coupled inductors create two resonant frequencies that cover a wide frequency range.… Click to show full abstract

ABSTRACT A coupled-inductors dual-mode switch cross-coupled pair voltage-controlled oscillator (VCO) was presented, adopting GaN-on-Si high-electron-mobility transistor technology. The coupled inductors create two resonant frequencies that cover a wide frequency range. The two continuous bands were achieved by using coupled inductors, and the fine-tuning is controlled by varactors. The low and high bands of the VCO were 2.77–3.11 GHz and 3–3.28 GHz, in the Vc range between 10 and 17 V, respectively, which corresponds to a 16.7% (510 MHz) tuning range. The lowest phase noise was −123 dBc/Hz at an offset frequency of 1 MHz, and the highest output power was 17.7 dBm using a 7.5-V power supply.

Keywords: controlled oscillator; dual mode; voltage controlled

Journal Title: International Journal of Electronics
Year Published: 2017

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