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ABSTRACT RF magnetron sputtering technique was employed to fabricate gallium zinc oxide ((Ga)ZnO) semiconductor thin film transistor (TFT) at 100°C. X-ray diffraction and Scanning electron microscopy were used to identify… Click to show full abstract
ABSTRACT RF magnetron sputtering technique was employed to fabricate gallium zinc oxide ((Ga)ZnO) semiconductor thin film transistor (TFT) at 100°C. X-ray diffraction and Scanning electron microscopy were used to identify the structure and morphology of (Ga)ZnO layer. Self-heating effect was very much reduced when compared with output characteristics of a TFT fabricated using undoped zinc oxide. The low deposition and processing temperatures make (Ga)ZnO-TFTs very promising for the flexible electronics.
Journal Title: Surface Engineering
Year Published: 2017
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