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To support the current level of integration beyond 22 nm, the FinFET architecture is introduced with the expectation of greater levels of device matching. An additional mechanism, arising from char... Click to show full abstract
To support the current level of integration beyond 22 nm, the FinFET architecture is introduced with the expectation of greater levels of device matching. An additional mechanism, arising from char...
Keywords:
angle variation;
voltage model;
threshold voltage;
variation oriented;
oriented threshold;
fin angle
Journal Title: IETE Journal of Research
Year Published: 2019
Link to full text (if available)
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Journal Title: IETE Journal of Research
Year Published: 2019
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!