ABSTRACT This paper presents an ultra-wideband and highly miniaturized dual-mode Wilkinson power divider fabricated using thin film integrated passive device (TFIPD) technology for GSM band (0.9 GHz). The four quarter-wavelength lines… Click to show full abstract
ABSTRACT This paper presents an ultra-wideband and highly miniaturized dual-mode Wilkinson power divider fabricated using thin film integrated passive device (TFIPD) technology for GSM band (0.9 GHz). The four quarter-wavelength lines of conventional two-section Wilkinson power divider are replaced with π-type transformer. In addition, a RC filter is introduced at the input port to minimize the return loss. The presented power divider prototype is micro-fabricated on a gallium arsenide (GaAs) substrate through TFIPD technology to reduce overall structure size and minimize overall parasitic losses. The fabricated power divider exhibits compact size at central frequency of 0.9 GHz with an ultra-wideband working bandwidth. To the best of authors’ knowledge, the designed power divider is approximately 8 times smaller than the previously reported power dividers.
               
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