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Single Event Upset (SEU) critical charge and sensitive volume depth of 65-nm CMOS bulk SRAM are predicted through energy deposition analysis of low energy protons. The deposited energy distributions of… Click to show full abstract
Single Event Upset (SEU) critical charge and sensitive volume depth of 65-nm CMOS bulk SRAM are predicted through energy deposition analysis of low energy protons. The deposited energy distributions of protons calculated by GEANT4 are incorporated into the three-dimensional device simulator to perform the Single Event Effects (SEE) simulation. Based on the analysis of the relationship between the energy deposition distributions and the single event responses, the deposited energy is correlated with the SEU critical charge, and valuable information of the upset sensitive volume depth is provided. Our prediction method is validated by the results of SPICE simulation method as well as experimental data.
Journal Title: Radiation Effects and Defects in Solids
Year Published: 2020
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