LAUSR

ABSTRACT We present a detailed theoretical study of the electronic transport properties of nano-devices based on MoS2. The transport resistivity is calculated on the basis of the usual momentum-balance equation derived from the semi-classical Boltzmann equation. Moreover, the expression of electron–electron screening is obtained within the random phase approximation. It shows that the resistivity R sub-linearly depends on the impurity density, and is inversely proportional to the electron densities. We obtain low resistivity or high conductivity of nano-devices based on MoS2 by tuning electron density or impurity density. This study is relevant to the application of nano-devices based on MoS2, such as MoS2 field-effect transistors.