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Abstract In2O3 film was prepared by magnetron sputtering technology on rough surface Si (100) substrates. The results show that the film grown at the sputtering gas pressure of 0.6 Pa, the… Click to show full abstract
Abstract In2O3 film was prepared by magnetron sputtering technology on rough surface Si (100) substrates. The results show that the film grown at the sputtering gas pressure of 0.6 Pa, the temperature of 600 °C, and the sputtering power of 100W had a better crystal quality than that of other samples. The sensitivity of films to ethanol at different temperatures were also surveyed and the sample grown on a substrate temperature at 400 °C, with 0.6Pa pressure and a sputtering power of 100W, which owned the better sensitivity than other samples at a ethanol gas temperature of 350 °C.
Journal Title: Integrated Ferroelectrics
Year Published: 2019
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