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Abstract Si(111) substrates, having more atoms available at the surface, are currently being exploited for nano-device fabrication. Epitaxial recrystallization of Si(111) layers amorphized under 80 keV Ar+ ion sputtering at off-normal… Click to show full abstract
Abstract Si(111) substrates, having more atoms available at the surface, are currently being exploited for nano-device fabrication. Epitaxial recrystallization of Si(111) layers amorphized under 80 keV Ar+ ion sputtering at off-normal incidence of 50° with 1 × 1017 to 5 × 1017 Ar+cm−2 has been investigated. Good epitaxial recrystallization under thermal annealing treatment at 1123 K has been observed. RBS/C demonstrates nonlinear behavior of amorphized and recrystallized layer thickness with irradiation fluence. Considerable stress still remains in the recrystallized layers as revealed by Raman studies. The correlation of the induced stress with amorphization and recrystallization has been established and finally the recrystallization mechanism has been discussed.
Journal Title: Integrated Ferroelectrics
Year Published: 2020
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