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Parameter extraction and modelling of the MOS transistor by an equivalent resistance

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During the analysis of multi-transistor circuits, the need arises to evaluate the time delay or the power consumption of the circuit. Due to the complexity of the transistor model, several… Click to show full abstract

During the analysis of multi-transistor circuits, the need arises to evaluate the time delay or the power consumption of the circuit. Due to the complexity of the transistor model, several complica...

Keywords: extraction modelling; mos transistor; parameter extraction; modelling mos; transistor equivalent; transistor

Journal Title: Mathematical and Computer Modelling of Dynamical Systems
Year Published: 2021

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