LAUSR

The influences of InGaN/GaN multiple quantum wells (MQWs) and AlGaN electron-blocking layers (EBL) on the performance of GaN-based violet laser diodes are investigated. Compared with the InGaN/GaN MQWs grown at two different temperatures, the same-temperature growth of InGaN well and GaN barrier layers has a positive effect on the threshold current and slope efficiency of laser diodes, indicating that the quality of MQWs is improved. In addition, the performance of GaN laser diodes could be further improved by increasing Al content in the AlGaN EBL due to the fact that the electron leakage current could be reduced by properly increasing the barrier height of AlGaN EBL. The violet laser diode with a peak output power of 20 W is obtained.