Triangular antidot lattices of various periods and aspect ratios are fabricated on high mobility GaAs/AlGaAs two-dimensional electron systems (2DESs), and are characterized by magneto-transport measurements at low temperatures down to… Click to show full abstract
Triangular antidot lattices of various periods and aspect ratios are fabricated on high mobility GaAs/AlGaAs two-dimensional electron systems (2DESs), and are characterized by magneto-transport measurements at low temperatures down to 300 mK. Commensurability peaks are generally observed in the magneto-resistivity ρxx , and remarkable similarity between dρxy /dB and ρxx is found. In samples of relatively large aspect ratio d/a, the Aharonov–Bohm-type oscillations are clearly observed in both ρxx and ρxy , as well as the quenching of the Hall resistivity ρxy in the vicinity of B = 0. These observations evince the good quality of our samples, and attest to the adequate preparation for fabricating antidot lattices of a reduced period to realize artificial graphene from GaAs/AlGaAs 2DESs.
               
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