LAUSR

To make photolithography patterns on 3D samples, the angled (inclined) exposure technique has been used so far. However, technological issues have emerged in making photolithography patterns on the surface of trench structures. The surface of the trench structures can be covered with a photoresist film by spray-coating but the photoresist film deposited on the sidewalls and bottom of the trench is generally thin. The thin photoresist film deposited inside the trench has been easily overdosed. Moreover, irregular patterns have frequently been formed by the light reflected inside the trench. In this study, we have developed liquid immersion photolithography using a light-absorbent material. The light-reflection inside the trench was suppressed. Various patterns were transferred in the photoresist film deposited on the trench structures which had an aspect ratio of 0.74. Compared to immersion photolithography using pure water under p-polarization light control, the light-absorbent liquid immersion photolithography developed here patterned well the surfaces of the trench sidewalls and bottom.