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We present a comparative study of the C-face and Si-face of 3C-SiC(111) grown on off-oriented 4H-SiC substrates by the sublimation epitaxy. By the lateral enlargement method, we demonstrate that th… Click to show full abstract
We present a comparative study of the C-face and Si-face of 3C-SiC(111) grown on off-oriented 4H-SiC substrates by the sublimation epitaxy. By the lateral enlargement method, we demonstrate that th ...
Keywords:
oriented sic;
face;
comparative study;
face sic;
grown oriented;
face face
Journal Title: Journal of Physics D: Applied Physics
Year Published: 2019
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Journal Title: Journal of Physics D: Applied Physics
Year Published: 2019
Link to full text (if available)
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recommendations!