LAUSR

An electron donor–acceptor system composed of a C60 fullerene acceptor and poly(9-vinylcarbazole) (PVK) as the donor has been constructed. This material can respond to both electrical and optical stimuli. Using the C60:PVK blends as the active layer, a solution-processed active layer with a configuration of indium tin oxid (ITO)/C60:PVK/Al is fabricated. Interestingly, when the applied voltages varied from 0 to −0.8 V, the as-fabricated device exhibits both photo-induced resistive state changes and volatile photo-response characteristics in the broadband visible region. The light illumination gives rise to a significant decrease in the device resistance. Furthermore, it is also found that, when the sweep-voltage applied to the device is changed from 0 to ±4 V, this device shows a typical nonvolatile rewritable memory performance in the dark. Upon illumination with different wavelengths of light, both the switching-on voltage and the ON/OFF ratio of the ITO/C60:PVK/Al device are found to be greatly decreased. This work opens up a pathway to the integration of information storage and modulating and demodulating functions in an optoelectronic device.