LAUSR

Strong resonant enhancement of Raman scattering on photonic resonance was observed in GaAsP semiconductor nanowires. The enhancement allowed for detailed studies of the surface phonon polariton (SPhP) scattering peak on individual nanowires. In particular, for the first time, the effect of the nanowire cross section shape on SPhP properties has been investigated. It was found that the cross section flattening induces a strong polarisation and a spectral shift of SPhPs supported by such nanowire. The assisting numerical simulations allowed to link the induced polarisation effect to a splitting of the resonant HE11 mode in the flattened nanowire. The observed spectral shift of SPhP has been also theoretically reproduced in elliptical approximation for the flattened cross section. The obtained results pave a ground for engineering of SPhP polarisation response and accurate spectral control of SPhPs in applications utilising the nanowire morphology.