LAUSR

Resistance switching devices, whose operation is driven by formation (SET) and dissolution (RESET) of conductive paths shorting and disconnecting the two metal electrodes, have recently received great attention and a deep general comprehension of their operation has been achieved. However, the link between switching characteristics and material properties is still quite weak. In particular, doping of the switching oxide layer has often been investigated only for looking at performance upgrade and rarely for a meticulous investigation of the switching mechanism. In this paper, the impact of Al doping of HfO2 devices on their switching operations, retention loss mechanisms and random telegraph noise traces is investigated. In addition, phenomenological modeling of the switching operation is performed for device employing both undoped and doped HfO2. We demonstrate that Al doping influences the filament disruption process during the RESET operation and, in particular, it contributes in preventing an efficient restoration of the oxide with respect to undoped devices.