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Improvement of SET Variability in TaOx Based Resistive RAM Devices.

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Improvement or at least control of variability is one of the key challenges for ReRAM technology. In this paper, we investigate the impact of a serial resistor as a voltage… Click to show full abstract

Improvement or at least control of variability is one of the key challenges for ReRAM technology. In this paper, we investigate the impact of a serial resistor as a voltage divider on the SET variability in Pt/Ta2O5/Ta/Pt nano crossbar devices. A partial RESET in a competing complementary switching mode is identified as a possible failure mechanism of bipolar switching SET in our devices. Due to a voltage divider effect, serial resistance value shows unequal impact on switching voltages of both modes which allows for a selective suppression of the complementary switching mode. The impact of voltage divider on SET variability is demonstrated. A combination of appropriate write voltage and serial resistance allows for a significant improvement of the SET variability.

Keywords: set variability; voltage divider; improvement set; variability

Journal Title: Nanotechnology
Year Published: 2017

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