LAUSR

Semiconducting single-walled carbon nanotube (SWNT) networks are promising for use as channel materials in field-effect transistors (FETs) in next-generation soft electronics, owing to their high intrinsic carrier mobility, mechanical flexibility, potential for low-cost production, and good processability. In this article, we review the recent progress related to carbon nanotube (CNT) devices in soft electronics by describing the materials and devices, processing methods, and example applications in soft electronic systems. First, solution-processed semiconducting SWNT deposition methods along with doping techniques used to achieve stable complementary metal-oxide-semiconductor devices are discussed. Various strategies for developing high-performance SWNT-based FETs, such as the proper material choices for the gates, dielectrics, and sources/drains of FETs, and methods of improving FET performance, such as hysteresis repression in SWNT-based FETs, are described next. These SWNT-based FETs have been used in flexible, stretchable, and wearable electronic devices to realize functionalities that could not be achieved using conventional silicon-based devices. We conclude this review by discussing the challenges faced by and outlook for CNT-based soft electronics.