LAUSR

PbS colloidal quantum dots are a promising material for the realization of low-cost, high-responsivity near-infrared photodetectors. Previously reported attempts showed high responsivity but a fast performance decay in air-exposed devices, demanding encapsulation of the photodetectors. Conversely, devices with very high air stability have been demonstrated but the low trap-state density hinders photoconductive gain and reduces overall responsivity. In this paper, photoconductive devices prepared with partially TBAI-exchanged PbS CQD are presented with enhanced air stability and high responsivity at low voltage, low optical power.