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A multiple-layer thin film of Pt/Ga2O3-x/SiC/Pt based resistive switching is systematically investigated. An excellent bipolar resistive switching behavior is observed with a high resistance switching ratio of OFF/ON up to… Click to show full abstract
A multiple-layer thin film of Pt/Ga2O3-x/SiC/Pt based resistive switching is systematically investigated. An excellent bipolar resistive switching behavior is observed with a high resistance switching ratio of OFF/ON up to 103. The current-voltage relations plot implies the Ohmic conductance of the ON state while the space and interface charge limited current of the OFF state. The micro mechanism of resistive switching is explained by the formation/rupture of conductive filaments formed out of oxygen vacancies within the Ga2O3-x and SiC region. Particularly, these devices exhibit excellent stability. The high OFF/ON resistance ratio can be completely retained without degradation over days.
Journal Title: Nanotechnology
Year Published: 2020
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