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e show experimentally that the ferroelectric HfZrO induces a bandgap of 0.18 eV in graphene monolayer. The experiments are performed on top-gate graphene/HfZrO transistors showing a very high transconductance of… Click to show full abstract
e show experimentally that the ferroelectric HfZrO induces a bandgap of 0.18 eV in graphene monolayer. The experiments are performed on top-gate graphene/HfZrO transistors showing a very high transconductance of 1 mS and very carrier mobilities of 7900 cm2/Vs. SiC and hexagonal boron nitride induce also a bandgap in graphene, but HfZrO is a CMOS compatible material which can be deposited on large Si wafers.
Keywords:
bandgap induced;
ferroelectric hfo2;
graphene bandgap;
hfzro;
hfo2 doped;
induced ferroelectric
Journal Title: Nanotechnology
Year Published: 2020
Link to full text (if available)
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Journal Title: Nanotechnology
Year Published: 2020
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!