LAUSR

In the field of clean solar-to-current devices, the photoelectron-transfer process is essential to the photovoltaic conversion in the typical n-i-p solar-cell structure. With regard to the oriented injection and exportation of photoelectron, the development of hole- blocking layer (HBL) materials with a high electron-transfer capability are exceedingly desirable. Profiting from the distortion of p-π electron cloud attracted by doped aprotic cation, the modified n-type PANI as the HBL of photoanode has been successfully fabricated through a facial one-pot square-wave potentiostatic electro- polymerization method. In terms of the flat-band potential, charge carrier concentration and device impedance, the synthesized n-type polyaniline layer doped by aprotic ionic-liquid ([EMIM] [EtSO4]) (AIL-PA layer) for QDSC directly facilitates the high electron carrying capacity as well as the electron-transfer driving force. Furthermore, the n-type polyaniline layer doped by aprotic ionic-liquid ([EMIM] [EtSO4]) (AIL-PA layer) has a widely matching band gap for electron exportation and improved photovoltaic performance of CdSxSe1-x QDSC: the PCE is 10.5% and the Jsc is 21.59 mA·cm-2 for the device with AIL-PA HBL. The electron diffusion length LD is 8.07 μm for the photoanode with AIL-PA I and 7.58 μm for the photoanode with AIL-PA II.