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Mode properties of telecom wavelengths InP-based high (Q/V) L4/3 photonic crystal cavities.

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In this work, we present finite difference time domain (3D-FDTD) simulations and optical characterizations by micro-photoluminescence measurements of InP-based L4/3 photonic crystal cavities with embedded quantum dots (QDs) and designed… Click to show full abstract

In this work, we present finite difference time domain (3D-FDTD) simulations and optical characterizations by micro-photoluminescence measurements of InP-based L4/3 photonic crystal cavities with embedded quantum dots (QDs) and designed for the M1 ground mode to be emitting at telecom C-band wavelengths. The simulated M1 Q-factor values exceed 106, while the M1 mode volume is found to be 0.33 × (λ/n)³, which is less than the half value of M1 mode volume of a comparable L3 cavity. Low temperature micro-photoluminescence measurements revealed experimental M1 Q-factor values in the order of 104with emission wavelengths around 1.55 μm. Weak coupling behavior of the QD exciton line and the M1 ground mode was achieved via temperature tuning experiments.

Keywords: photonic crystal; mode properties; crystal cavities; inp based

Journal Title: Nanotechnology
Year Published: 2020

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