LAUSR

Electronic noise generators are an essential component of molecular neuromorphic devices. To realize molecular noise generators with a high degree of freedom for design and integration into molecular devices, the utilization of the local electric field for the modulation of electrical conduction via a shape-limited conductive polymer is one promising strategy. Herein, a molecular noise generator composed of thin self-doped polyaniline (SPAN) lines is reported. SPAN lines fabricated via fountain pen lithography on SiO2/Si substrates were found to generate current noise upon laser irradiation. This current noise exhibited white-noise-like power spectral density in the frequency range of 1-25 Hz and was independent of temperature. Multiple independent noise generation on the same substrate was also successfully demonstrated. The present results indicate that the noise generation mechanism involves the local modulation of hopping conduction via SPAN lines owing to the spatial proximity of the conduction path in the SPAN line to the surface photovoltage region of the SiO2/Si interface. This on-site random noise generation in shape-limited conductive polymers is expected to be beneficial for the realization of molecular neuromorphic devices.