LAUSR

Density functional theory calculations are performed to explore the electronic and transport properties of monolayer α-GeTe under uniaxial strains. It is found that monolayer α-GeTe has an indirect band gap of 1.75eV, and exhibits the worthwhile anisotropy along with high electron mobility. The electron mobilities reach up to 674.0 cm2·V-1·s-1 and 902.3 cm2·V-1·s-1 along zigzag and armchair direction, respectively. When the uniaxial strain is applied, our results show an appreciable strain sensitivity of electron mobility. It is found that the electron mobility dramatically increases by an order of magnitude around a special strain due to the shifts of conduction band minimum (CBM). In addition, we also construct a double gates tunneling field effect transistor (TFET) with a channel of monolayer α-GeTe. The steeper subthreshold swing (SS) and higher ON/OFF ratio are observed when applying the tensile strain to the channel. As a result, it is clearly understand that the appropriate strain can significantly improve the performance of α-GeTe TFET.