LAUSR

The effects of dimensional structure on the properties of lead iodide perovskite (C8H9NH3)2(CH3NH3) n−1Pb n I3n+1 were investigated. Furthermore, perovskite thin films with different dimensionalities were applied as the channel layer of thin film transistors (TFT). The electrical performance and stability of TFT devices were significantly improved through the regulation of dimensional microstructure of the perovskites. As a result, the quasi-2D (n = 6) perovskite TFTs achieved a field-effect mobility (μ FE) of 3.90 cm2 V−1 s−1, with 104 on-off current ratio and −1.85 V threshold voltage, which can be maintained well after 4 days without degradation at 30% ambient humidity. Moreover, the electrical performance of the TFTs based on Pure-2D and Quasi-2D perovskite also exhibited a good bias stability.