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High quality AlAs1-xBix layers with Bi composition of 3%-10.5% have been successfully grown by molecular beam epitaxy. The Bi incorporation is confirmed by Rutherford backscattering spectroscopy. For a 400 nm… Click to show full abstract
High quality AlAs1-xBix layers with Bi composition of 3%-10.5% have been successfully grown by molecular beam epitaxy. The Bi incorporation is confirmed by Rutherford backscattering spectroscopy. For a 400 nm thick AlAsBi layer, the strain relaxation occurs when the Bi composition is larger than 6.5%. Flux ratio is calculated from Knudsen-cell model and Maxwell equation, according to the geometrical relationship of our equipment. The Bi incorporation increases with increasing the As-Al flux ratio as well as the Bi flux. The extrapolation lattice constant of hypothetic zincblende AlBi alloy is about 6.23 angstrom.
Journal Title: Semiconductor Science and Technology
Year Published: 2019
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