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Fe2O3 and γ-FeOOH, major constituents of iron rust, are n-type semiconductors with a bandgap of 2.0 ~ 2.6 eV. In this work, we deposited Cu-doped p-type iron oxide by the… Click to show full abstract
Fe2O3 and γ-FeOOH, major constituents of iron rust, are n-type semiconductors with a bandgap of 2.0 ~ 2.6 eV. In this work, we deposited Cu-doped p-type iron oxide by the electrochemical deposition method. p-type iron oxide is expected to be applied for photo-cathodes in electrochemistry and also for pn junction solar cells. The films were deposited from an aqueous solution containing FeSO4 and CuSO4 and annealed in air at 400 °C. The conduction type was converted into p-type when the ratio of copper to iron in the film was about 10% or more. Annealing in air improved film adhesion to the substrate and enhanced p-type conductivity.
Journal Title: Semiconductor Science and Technology
Year Published: 2018
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