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The article deals with the basic aspects of ion-stimulated Auger process. The authors suggested using the standard Everhart–Thornley detector to obtain a contrast of ion-induced Auger electrons on cross-beam systems… Click to show full abstract
The article deals with the basic aspects of ion-stimulated Auger process. The authors suggested using the standard Everhart–Thornley detector to obtain a contrast of ion-induced Auger electrons on cross-beam systems using mathematical processing of the image which is based on spectroscopic information. As a result, this work consisted of obtaining images that showed the contrast distribution of Auger electrons and the sputtering yield on aluminum thin films samples.
Keywords:
auger electrons;
beam systems;
induced auger;
cross beam;
ion;
ion induced
Journal Title: Semiconductor Science and Technology
Year Published: 2019
Link to full text (if available)
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Journal Title: Semiconductor Science and Technology
Year Published: 2019
Link to full text (if available)
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recommendations!