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A parameter-extraction approach for determination of the small-signal equivalent circuit model for InP/InGaAs double heterojunction bipolar transistors (HBTs) is presented. This method combines the advantages of the conventional T- and… Click to show full abstract
A parameter-extraction approach for determination of the small-signal equivalent circuit model for InP/InGaAs double heterojunction bipolar transistors (HBTs) is presented. This method combines the advantages of the conventional T- and π-type equivalent-circuit topologies. All the equivalent circuit elements are only extracted analytically from S-parameter data without any numerical optimization. The agreements between the measured and model-calculated data are excellent in the frequency range of 0.1-110GHz. Furthermore, an improved extrinsic model of collector part is given for better S22 accuracy.
Journal Title: Semiconductor Science and Technology
Year Published: 2019
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