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The simple device structure of junctionless transistors (JLTs), which lack PN junctions and involve bulk-conduction-based operation, is an attractive component for the future fulfilment of Moore's law. However, the unique… Click to show full abstract
The simple device structure of junctionless transistors (JLTs), which lack PN junctions and involve bulk-conduction-based operation, is an attractive component for the future fulfilment of Moore's law. However, the unique bulk conduction mechanism of JLTs introduces inaccuracies in low-field mobility (μ 0) extracted from conventional Y-function method. The top channel width-dependent μ 0 error of tri-gate JLTs was investigated using numerical simulation and analytical modeling. This work provides important information for an accurate determination of μ 0 in tri-gate JLTs.
Journal Title: Semiconductor Science and Technology
Year Published: 2020
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