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Influence of deposition temperature on amorphous Ga2O3 solar-blind ultraviolet photodetector

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Solar-blind ultraviolet photodetectors have potential applications in space communication, ozone hole monitoring and missile tracking. Amorphous Ga2O3 (a-Ga2O3) films are deposited by a simple radio frequency magnetron sputtering at different… Click to show full abstract

Solar-blind ultraviolet photodetectors have potential applications in space communication, ozone hole monitoring and missile tracking. Amorphous Ga2O3 (a-Ga2O3) films are deposited by a simple radio frequency magnetron sputtering at different deposition temperatures. Fully transparent devices on a quartz substrate are fabricated with high responsivity, wide detection range and good repeatability. With the increase of Ga2O3 deposited temperature, the concentration of oxygen vacancy increases accordingly, leading to a wide detection range from 250 to 325 nm and high responsivity (138 A W−1 at 5 V bias). The underlying mechanism has been discussed and analyzed. Our results should advance the application of a-Ga2O3-based ultraviolet photodetectors and other relevant devices.

Keywords: deposition; amorphous ga2o3; blind ultraviolet; solar blind

Journal Title: Semiconductor Science and Technology
Year Published: 2020

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