LAUSR

In this paper, The Vertical Power MOSFET with Partial GaN/Si Heterojunction is proposed, and the Partial GaN/Si Heterojunction double-diffused MOSFET（Partial GaN/Si VDMOS）and U-shaped MOSFET（Partial GaN/Si UMOS）are simulated. Thanks to the breakdown point transfer technology（BPT）, the breakdown point is transferred from the high electric field area to the low electric field area, therefore, the breakdown voltage(BV) is improved. Different types of dangling bonds are introduced to simulate the influence of different interface state densities on the forward characteristics of the device, the proposed structure alleviates the influence of interface state occurred in the whole GaN/Si heterojunction VDMOS and UMOS(GaN/Si VDMOS and GaN/Si UMOS). The results show that the BV and the specific on-resistance(Ron,sp) of Partial GaN/Si VDMOS are 325V and 10.17mΩcm2, of Partial GaN/Si UMOS are 279V and 2.34mΩcm2, all of which break the limit relation of silicon.