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Corrigendum: Surface termination and Schottky-barrier formation of In4Se3(001) (2020 Semicond. Sci. Technol. 35 065009)

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1 Department of Physics and Astronomy, University of Nebraska–Lincoln, Jorgenson Hall, 855 North 16the Street, Lincoln, NE 68588-0299, United States of America 2 Electronics Department, Ivan Franko L’viv National University,… Click to show full abstract

1 Department of Physics and Astronomy, University of Nebraska–Lincoln, Jorgenson Hall, 855 North 16the Street, Lincoln, NE 68588-0299, United States of America 2 Electronics Department, Ivan Franko L’viv National University, L’viv, Ukraine 3 CAS Key Lab of Materials for Energy Conversion, University of Science and Technology of China, Hefei, People’s Republic of China 4 Department of Chemistry, University of Nebraska–Lincoln, Lincoln, NE 68588, United States of America 5 Department of Physics, Oklahoma State University, Stillwater, OK 74078-3072, United States of America 6 Department of Physics, University of Nebraska–Omaha, Omaha, NE 68182, United States of America 7 Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY 11973, United States of America

Keywords: department physics; physics; university; united states; states america

Journal Title: Semiconductor Science and Technology
Year Published: 2021

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