In this study, we deposited Cu2ZnSnS4 (CZTS) thin films with various thicknesses using electrodeposition and sputtering methods to exploit them as counter electrodes (CEs) in Zn2SnO4 -based dye-sensitized solar cells… Click to show full abstract
In this study, we deposited Cu2ZnSnS4 (CZTS) thin films with various thicknesses using electrodeposition and sputtering methods to exploit them as counter electrodes (CEs) in Zn2SnO4 -based dye-sensitized solar cells (DSSCs). The ternary Zn2SnO4 compound with wide bandgap energy, large corrosive resistivity, high electron mobility, and an appropriate conduction band edge position concerning the dye molecules (N719) can be an outstanding alternative for photoanode besides CZTS CE in DSSCs. On the other hand, CZTS is an impressive candidate as a CE material, but its electrocatalytic activity for the recovery of I−/I3− ionic species can be different depending on the synthesis process. Our results indicated the creation of porous morphology in the solution-based deposited films, which yields higher electrocatalytic activity in the CE performance in comparison with the physical deposition method, resulting in short circuit current densities of 9.77 and 8.40 mA cm−2 and open-circuit voltages of 633 and 583 mV for the DSSCs prepared by the respective techniques. The large active area and highly crystallized CZTS films, prepared by the electrodeposition method, led to an around 50% efficiency improvement compared to the widely used, more expensive platinum.
               
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