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Low-temperature AlN templates were grown directly on a sapphire c-plane (001) by a two-step growth method. The different AlN morphologies were observed, and the influence of the ammonia and trimethylaluminum… Click to show full abstract
Low-temperature AlN templates were grown directly on a sapphire c-plane (001) by a two-step growth method. The different AlN morphologies were observed, and the influence of the ammonia and trimethylaluminum flowrate on the AlN morphology was investigated separately. We found that only one parameter of V/III ratio is not enough for the discussion of AlN morphology. An increase of either the V or III precursor flowrate will lead to a decrease in the surface mobility of Al atoms and possibly cause the same kind of change in AlN morphology. A smooth AlN surface is acquired by adjusting the Al mobility to a suitable value that is neither too high nor too low.
Journal Title: Semiconductor Science and Technology
Year Published: 2021
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