LAUSR

DC-pulse magnetron sputtering was utilized to deposit a 300 nm-thick n-type GaN thin film that was co-doped with Si–Sn onto an amorphous glass substrate with a ZnO buffer layer. The deposited thin films were then subjected to post-growth thermal annealing at temperatures of 300 °C, 400 °C, or 500 °C to enhance their crystal quality. Hall measurements revealed that the film annealed at 500 °C had the lowest thin-film resistance of 0.82 Ω cm and the highest carrier concentration of 3.84 × 1019 cm−3. The thin film surface was studied using atomic force microscopy; the film annealed at 500 °C had an average grain size and surface roughness of 25.3 and 2.37 nm, respectively. Furthermore, the x-ray diffraction measurements revealed a preferential (002) crystal orientation and hexagonal wurtzite crystal structure at 2θ ≈ 34.5°. The thin film had a full width at half maximum value of 0.387°, it was also found to be very narrow. Compositional analysis of the films was conducted with x-ray photoelectron spectroscopy and verified that both Si and Sn were doped into the GaN film utilizing covalent bonding with N atoms. Finally, the film annealed at 500 °C had a high optical transmittance of 82.9% at 400–800 nm, a high figure of merit factor of 490.3 × 10−3 Ω−1, and low contact resistance of 567 Ω; these excellent optoelectronic properties were attributed to the film’s high electron concentration and indicate that the material is feasible for application in transparent optoelectronic devices.