We present improvement in the in-field transport critical current (I c ) of Zr-doped RE-Ba-Cu-O (REBCO, RE = rare earth) tapes to remarkable levels by post-deposition tensile-creep deformation at 580… Click to show full abstract
We present improvement in the in-field transport critical current (I c ) of Zr-doped RE-Ba-Cu-O (REBCO, RE = rare earth) tapes to remarkable levels by post-deposition tensile-creep deformation at 580 °C. The deformed samples show up to three times higher Ic than a reference sample at 77 K, 1 T when the magnetic field is parallel to the ab-plane. This enhancement in the in-field Ic is attributed to an increase in the density of ab-plane stacking faults that are formed by high-temperature deformation.
               
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